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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Xiang Li; Feng Liang; Wei Liu; Shuangtao Liu; Liqun Zhang; Hui Yang; Jian Zhang; Mo Li
2017
Source PublicationIEEE Photonics Journal
Volume9Issue:2Pages:2300108
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28785
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Jing Yang,Degang Zhao,Desheng Jiang,et al. Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes[J]. IEEE Photonics Journal,2017,9(2):2300108.
APA Jing Yang.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Jianjun Zhu.,...&Mo Li.(2017).Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes.IEEE Photonics Journal,9(2),2300108.
MLA Jing Yang,et al."Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes".IEEE Photonics Journal 9.2(2017):2300108.
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