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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer
Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Hui Yang; Heng Long; Mo Li
2017
Source PublicationJournal of Crystal Growth
Volume467Pages:1-5
Subject Area光电子学
Indexed BySCI
Date Available2018-07-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28784
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Feng Liang,Degang Zhao,Desheng Jiang,et al. Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer[J]. Journal of Crystal Growth,2017,467:1-5.
APA Feng Liang.,Degang Zhao.,Desheng Jiang.,Zongshun Liu.,Jianjun Zhu.,...&Mo Li.(2017).Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer.Journal of Crystal Growth,467,1-5.
MLA Feng Liang,et al."Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer".Journal of Crystal Growth 467(2017):1-5.
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