Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer | |
Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Hui Yang; Heng Long; Mo Li | |
2017 | |
Source Publication | Journal of Crystal Growth
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Volume | 467Pages:1-5 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2018-07-11 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28784 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Feng Liang,Degang Zhao,Desheng Jiang,et al. Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer[J]. Journal of Crystal Growth,2017,467:1-5. |
APA | Feng Liang.,Degang Zhao.,Desheng Jiang.,Zongshun Liu.,Jianjun Zhu.,...&Mo Li.(2017).Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer.Journal of Crystal Growth,467,1-5. |
MLA | Feng Liang,et al."Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer".Journal of Crystal Growth 467(2017):1-5. |
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Improvement of Ohmic(1042KB) | 限制开放 | License | Application Full Text |
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