| Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer | |
| Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Hui Yang; Heng Long; Mo Li | |
| 2017 | |
| Source Publication | Journal of Crystal Growth
 |
| Volume | 467Pages:1-5 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28784 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Feng Liang,Degang Zhao,Desheng Jiang,et al. Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer[J]. Journal of Crystal Growth,2017,467:1-5. |
| APA | Feng Liang.,Degang Zhao.,Desheng Jiang.,Zongshun Liu.,Jianjun Zhu.,...&Mo Li.(2017).Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer.Journal of Crystal Growth,467,1-5. |
| MLA | Feng Liang,et al."Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer".Journal of Crystal Growth 467(2017):1-5. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Improvement of Ohmic（1042KB） | 限制开放 | License | Application Full Text | |||
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