| Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact | |
| Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shaungtao Liu; Yao Xing; Liqun Zhang; Mo Li; Jian Zhang | |
| 2017 | |
| Source Publication | Applied Optics
 |
| Volume | 56Issue:14Pages:4197-4200 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28783 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Feng Liang,Degang Zhao,Desheng Jiang,et al. Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact[J]. Applied Optics,2017,56(14):4197-4200. |
| APA | Feng Liang.,Degang Zhao.,Desheng Jiang.,Zongshun Liu.,Jianjun Zhu.,...&Jian Zhang.(2017).Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.Applied Optics,56(14),4197-4200. |
| MLA | Feng Liang,et al."Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact".Applied Optics 56.14(2017):4197-4200. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Influence of residua（4185KB） | 限制开放 | License | Application Full Text | |||
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