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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes
P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
2017
Source PublicationAIP Advances
Volume7Pages:035103
Subject Area光电子学
Indexed BySCI
Date Available2018-07-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28781
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
P. Chen,D. G. Zhao,D. S. Jiang,等. Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes[J]. AIP Advances,2017,7:035103.
APA P. Chen.,D. G. Zhao.,D. S. Jiang.,H. Long.,M. Li.,...&H. Yang.(2017).Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes.AIP Advances,7,035103.
MLA P. Chen,et al."Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes".AIP Advances 7(2017):035103.
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