| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes | |
| P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang | |
| 2017 | |
| Source Publication | AIP Advances
 |
| Volume | 7Pages:035103 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28781 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | P. Chen,D. G. Zhao,D. S. Jiang,等. Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes[J]. AIP Advances,2017,7:035103. |
| APA | P. Chen.,D. G. Zhao.,D. S. Jiang.,H. Long.,M. Li.,...&H. Yang.(2017).Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes.AIP Advances,7,035103. |
| MLA | P. Chen,et al."Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes".AIP Advances 7(2017):035103. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| EL property improvem（5388KB） | 限制开放 | License | Application Full Text | |||
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