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Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes
Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang; Ping Chen; Jian Jun Zhu; Zong Shun Liu; Jing Yang; Wei Liu; Shuang Tao Liu; Li Qun Zhang; Mo Li
2017
Source PublicationPhys. Status Solidi A
Volume214Issue:10Pages:1700320
Subject Area光电子学
Indexed BySCI
Date Available2018-07-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28771
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yao Xing,De Gang Zhao,De Sheng Jiang,et al. Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes[J]. Phys. Status Solidi A,2017,214(10):1700320.
APA Yao Xing.,De Gang Zhao.,De Sheng Jiang.,Xiang Li.,Feng Liang.,...&Mo Li.(2017).Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes.Phys. Status Solidi A,214(10),1700320.
MLA Yao Xing,et al."Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes".Phys. Status Solidi A 214.10(2017):1700320.
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