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Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang; Shuangtao Liu; Yao Xing; Heng Long; Mo Li
2017
Source PublicationIEEE JOURNAL OF PHOTOVOLTAICS
Volume7Issue:4Pages:1017-1023
Subject Area光电子学
Indexed BySCI
Date Available2018-07-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28769
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wei Liu,Degang Zhao,Desheng Jiang,et al. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells[J]. IEEE JOURNAL OF PHOTOVOLTAICS,2017,7(4):1017-1023.
APA Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Dongping Shi.,...&Mo Li.(2017).Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells.IEEE JOURNAL OF PHOTOVOLTAICS,7(4),1017-1023.
MLA Wei Liu,et al."Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells".IEEE JOURNAL OF PHOTOVOLTAICS 7.4(2017):1017-1023.
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