| Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells | |
| Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang; Shuangtao Liu; Yao Xing; Heng Long; Mo Li | |
| 2017 | |
| Source Publication | IEEE JOURNAL OF PHOTOVOLTAICS
 |
| Volume | 7Issue:4Pages:1017-1023 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28769 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Wei Liu,Degang Zhao,Desheng Jiang,et al. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells[J]. IEEE JOURNAL OF PHOTOVOLTAICS,2017,7(4):1017-1023. |
| APA | Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Dongping Shi.,...&Mo Li.(2017).Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells.IEEE JOURNAL OF PHOTOVOLTAICS,7(4),1017-1023. |
| MLA | Wei Liu,et al."Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells".IEEE JOURNAL OF PHOTOVOLTAICS 7.4(2017):1017-1023. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Influence of Indium （342KB） | 限制开放 | License | Application Full Text | |||
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