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Different annealing temperature suitable for different Mg doped P-GaN
S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang; P. Chen; J.J. Zhu; Z.S. Liu; X. Li; W. Liu; L.Q. Zhang; H. Long; M. Li
2017
Source PublicationSuperlattices and Microstructures
Volume104Issue:2017Pages:63-68
Subject Area光电子学
Indexed BySCI
Date Available2018-07-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28768
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
S.T. Liu,J. Yang,D.G. Zhao,et al. Different annealing temperature suitable for different Mg doped P-GaN[J]. Superlattices and Microstructures,2017,104(2017):63-68.
APA S.T. Liu.,J. Yang.,D.G. Zhao.,D.S. Jiang.,F. Liang.,...&M. Li.(2017).Different annealing temperature suitable for different Mg doped P-GaN.Superlattices and Microstructures,104(2017),63-68.
MLA S.T. Liu,et al."Different annealing temperature suitable for different Mg doped P-GaN".Superlattices and Microstructures 104.2017(2017):63-68.
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