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New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode
Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Heng Long; Mo Li
2017
Source PublicationOptics and Laser Technology
Volume97Pages:284–289
Subject Area光电子学
Indexed BySCI
Date Available2018-07-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28766
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Feng Liang,Degang Zhao,Desheng Jiang,et al. New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode[J]. Optics and Laser Technology,2017,97:284–289.
APA Feng Liang.,Degang Zhao.,Desheng Jiang.,Zongshun Liu.,Jianjun Zhu.,...&Mo Li.(2017).New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode.Optics and Laser Technology,97,284–289.
MLA Feng Liang,et al."New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode".Optics and Laser Technology 97(2017):284–289.
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