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Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy
JUN ZHENG; SUYUAN WANG; HUI CONG; COLLEEN S. FENRICH; ZHI LIU; CHUNLAI XUE; CHUANBO LI; YUHUA ZUO; BUWEN CHENG; JAMES S. HARRIS; AND QIMING WANG
2017
Source PublicationLetter
Volume42Issue:8Pages:1608-1611
Subject Area光电子学
Indexed BySCI
Date Available2018-07-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28736
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
JUN ZHENG,SUYUAN WANG,HUI CONG,et al. Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy[J]. Letter,2017,42(8):1608-1611.
APA JUN ZHENG.,SUYUAN WANG.,HUI CONG.,COLLEEN S. FENRICH.,ZHI LIU.,...&AND QIMING WANG.(2017).Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy.Letter,42(8),1608-1611.
MLA JUN ZHENG,et al."Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy".Letter 42.8(2017):1608-1611.
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