Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications | |
Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang | |
2017 | |
Source Publication | Superlattices and Microstructures
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Volume | 111Pages:286-292 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2018-07-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28695 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Suyuan Wang,Jun Zheng,Chunlai Xue,et al. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications[J]. Superlattices and Microstructures,2017,111:286-292. |
APA | Suyuan Wang.,Jun Zheng.,Chunlai Xue.,Chuanbo Li.,Yuhua Zuo.,...&Qiming Wang.(2017).Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications.Superlattices and Microstructures,111,286-292. |
MLA | Suyuan Wang,et al."Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications".Superlattices and Microstructures 111(2017):286-292. |
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