| Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications | |
| Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang | |
| 2017 | |
| Source Publication | Superlattices and Microstructures
 |
| Volume | 111Pages:286-292 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28695 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Suyuan Wang,Jun Zheng,Chunlai Xue,et al. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications[J]. Superlattices and Microstructures,2017,111:286-292. |
| APA | Suyuan Wang.,Jun Zheng.,Chunlai Xue.,Chuanbo Li.,Yuhua Zuo.,...&Qiming Wang.(2017).Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications.Superlattices and Microstructures,111,286-292. |
| MLA | Suyuan Wang,et al."Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications".Superlattices and Microstructures 111(2017):286-292. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Device simulation of（1880KB） | 限制开放 | License | Application Full Text | |||
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