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Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications
Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang
2017
Source PublicationSuperlattices and Microstructures
Volume111Pages:286-292
Subject Area光电子学
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28695
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Suyuan Wang,Jun Zheng,Chunlai Xue,et al. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications[J]. Superlattices and Microstructures,2017,111:286-292.
APA Suyuan Wang.,Jun Zheng.,Chunlai Xue.,Chuanbo Li.,Yuhua Zuo.,...&Qiming Wang.(2017).Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications.Superlattices and Microstructures,111,286-292.
MLA Suyuan Wang,et al."Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications".Superlattices and Microstructures 111(2017):286-292.
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