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48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth
Zhi Liu; Fan Yang; Wenzhou Wu; Hui Cong; Jun Zheng; Chuanbo Li; Chunlai Xue; Member,IEEE; Buwen Cheng; Qiming Wang
2017
Source PublicationJOURNAL OF LIGHTWAVE TECHNOLOGY
Volume35Issue:24Pages:5306-5310
Subject Area光电子学
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28694
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Zhi Liu,Fan Yang,Wenzhou Wu,et al. 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2017,35(24):5306-5310.
APA Zhi Liu.,Fan Yang.,Wenzhou Wu.,Hui Cong.,Jun Zheng.,...&Qiming Wang.(2017).48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth.JOURNAL OF LIGHTWAVE TECHNOLOGY,35(24),5306-5310.
MLA Zhi Liu,et al."48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth".JOURNAL OF LIGHTWAVE TECHNOLOGY 35.24(2017):5306-5310.
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