48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth | |
Zhi Liu; Fan Yang; Wenzhou Wu; Hui Cong; Jun Zheng; Chuanbo Li; Chunlai Xue; Member,IEEE; Buwen Cheng; Qiming Wang | |
2017 | |
Source Publication | JOURNAL OF LIGHTWAVE TECHNOLOGY
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Volume | 35Issue:24Pages:5306-5310 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2018-07-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28694 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Zhi Liu,Fan Yang,Wenzhou Wu,et al. 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2017,35(24):5306-5310. |
APA | Zhi Liu.,Fan Yang.,Wenzhou Wu.,Hui Cong.,Jun Zheng.,...&Qiming Wang.(2017).48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth.JOURNAL OF LIGHTWAVE TECHNOLOGY,35(24),5306-5310. |
MLA | Zhi Liu,et al."48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth".JOURNAL OF LIGHTWAVE TECHNOLOGY 35.24(2017):5306-5310. |
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48 GHz high-performa(598KB) | 限制开放 | License | Application Full Text |
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