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Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys
Wenqi Huang; Hong Yang; Buwen Cheng; Chunlai Xue
2017
Source PublicationPhys. Chem. Chem. Phys.
Volume19Pages:27031--27037
Subject Area光电子学
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28693
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wenqi Huang,Hong Yang,Buwen Cheng,et al. Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys[J]. Phys. Chem. Chem. Phys.,2017,19:27031--27037.
APA Wenqi Huang,Hong Yang,Buwen Cheng,&Chunlai Xue.(2017).Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.Phys. Chem. Chem. Phys.,19,27031--27037.
MLA Wenqi Huang,et al."Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys".Phys. Chem. Chem. Phys. 19(2017):27031--27037.
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