| Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys | |
| Wenqi Huang; Hong Yang; Buwen Cheng; Chunlai Xue | |
| 2017 | |
| Source Publication | Phys. Chem. Chem. Phys.
 |
| Volume | 19Pages:27031--27037 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28693 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Wenqi Huang,Hong Yang,Buwen Cheng,et al. Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys[J]. Phys. Chem. Chem. Phys.,2017,19:27031--27037. |
| APA | Wenqi Huang,Hong Yang,Buwen Cheng,&Chunlai Xue.(2017).Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.Phys. Chem. Chem. Phys.,19,27031--27037. |
| MLA | Wenqi Huang,et al."Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys".Phys. Chem. Chem. Phys. 19(2017):27031--27037. |
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| Theoretical study of（3072KB） | 限制开放 | License | Application Full Text | |||
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