Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys | |
Wenqi Huang; Hong Yang; Buwen Cheng; Chunlai Xue | |
2017 | |
Source Publication | Phys. Chem. Chem. Phys.
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Volume | 19Pages:27031--27037 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2018-07-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28693 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Wenqi Huang,Hong Yang,Buwen Cheng,et al. Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys[J]. Phys. Chem. Chem. Phys.,2017,19:27031--27037. |
APA | Wenqi Huang,Hong Yang,Buwen Cheng,&Chunlai Xue.(2017).Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.Phys. Chem. Chem. Phys.,19,27031--27037. |
MLA | Wenqi Huang,et al."Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys".Phys. Chem. Chem. Phys. 19(2017):27031--27037. |
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