SEMI OpenIR  > 半导体超晶格国家重点实验室
Anomalous resistivity upturn in epitaxial L21-Co2MnAl films
L. J. Zhu; J. H. Zhao
2017
Source PublicationScientific Reports
Volume7Pages:42931
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28681
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
L. J. Zhu,J. H. Zhao. Anomalous resistivity upturn in epitaxial L21-Co2MnAl films[J]. Scientific Reports,2017,7:42931.
APA L. J. Zhu,&J. H. Zhao.(2017).Anomalous resistivity upturn in epitaxial L21-Co2MnAl films.Scientific Reports,7,42931.
MLA L. J. Zhu,et al."Anomalous resistivity upturn in epitaxial L21-Co2MnAl films".Scientific Reports 7(2017):42931.
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