SEMI OpenIR  > 半导体超晶格国家重点实验室
Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction
Xiaochen Ji; Chao Shen; Yuanjun Wu; Jun Lu; Jianhua Zhao; Houzhi Zheng
2017
Source PublicationJ. Phys. D: Appl. Phys.
Volume50Pages:445306 (7pp)
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28680
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiaochen Ji,Chao Shen,Yuanjun Wu,et al. Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction[J]. J. Phys. D: Appl. Phys.,2017,50:445306 (7pp).
APA Xiaochen Ji,Chao Shen,Yuanjun Wu,Jun Lu,Jianhua Zhao,&Houzhi Zheng.(2017).Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction.J. Phys. D: Appl. Phys.,50,445306 (7pp).
MLA Xiaochen Ji,et al."Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction".J. Phys. D: Appl. Phys. 50(2017):445306 (7pp).
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