SEMI OpenIR  > 半导体超晶格国家重点实验室
Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W
K.K. Meng; J. Miao; X.G. Xu; Y. Wu; J.H. Zhao; Y. Jiang
2017
Source PublicationSolid State Communications
Volume255-256Pages:15–19
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28677
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
K.K. Meng,J. Miao,X.G. Xu,et al. Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W[J]. Solid State Communications,2017,255-256:15–19.
APA K.K. Meng,J. Miao,X.G. Xu,Y. Wu,J.H. Zhao,&Y. Jiang.(2017).Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W.Solid State Communications,255-256,15–19.
MLA K.K. Meng,et al."Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W".Solid State Communications 255-256(2017):15–19.
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