Knowledge Management System Of Institute of Semiconductors,CAS
Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W | |
K.K. Meng; J. Miao; X.G. Xu; Y. Wu; J.H. Zhao; Y. Jiang | |
2017 | |
Source Publication | Solid State Communications
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Volume | 255-256Pages:15–19 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2018-07-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28677 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | K.K. Meng,J. Miao,X.G. Xu,et al. Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W[J]. Solid State Communications,2017,255-256:15–19. |
APA | K.K. Meng,J. Miao,X.G. Xu,Y. Wu,J.H. Zhao,&Y. Jiang.(2017).Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W.Solid State Communications,255-256,15–19. |
MLA | K.K. Meng,et al."Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W".Solid State Communications 255-256(2017):15–19. |
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