Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W

	Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W
	K.K. Meng; J. Miao; X.G. Xu; Y. Wu; J.H. Zhao; Y. Jiang
	2017
Source Publication	Solid State Communications
Volume	255-256 Pages:15–19
Subject Area	半导体物理
Indexed By	SCI
Date Available	2018-07-02
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28677
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	K.K. Meng,J. Miao,X.G. Xu,et al. Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W[J]. Solid State Communications,2017,255-256:15–19.
APA	K.K. Meng,J. Miao,X.G. Xu,Y. Wu,J.H. Zhao,&Y. Jiang.(2017).Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W.Solid State Communications,255-256,15–19.
MLA	K.K. Meng,et al."Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W".Solid State Communications 255-256(2017):15–19.

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