SEMI OpenIR  > 半导体超晶格国家重点实验室
Uniform annealing effect of electron irradiation on ferromagnetic GaMnAs thin films
Jia Luo; GangXiang; GangxuGu; XiZhang; HailongWang; JianhuaZhao
2017
Source PublicationJournal of Magnetism and Magnetic Materials
Volume422Pages:124–127
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28671
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jia Luo,GangXiang,GangxuGu,et al. Uniform annealing effect of electron irradiation on ferromagnetic GaMnAs thin films[J]. Journal of Magnetism and Magnetic Materials,2017,422:124–127.
APA Jia Luo,GangXiang,GangxuGu,XiZhang,HailongWang,&JianhuaZhao.(2017).Uniform annealing effect of electron irradiation on ferromagnetic GaMnAs thin films.Journal of Magnetism and Magnetic Materials,422,124–127.
MLA Jia Luo,et al."Uniform annealing effect of electron irradiation on ferromagnetic GaMnAs thin films".Journal of Magnetism and Magnetic Materials 422(2017):124–127.
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