SEMI OpenIR  > 半导体超晶格国家重点实验室
A CMOS Fully Integrated 860-GHz Terahertz Sensor
Zhao-yang Liu; Li-yuan Liu; Member, IEEE; Jie Yang; Nan-jian Wu
2017
Source PublicationIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume7Issue:4Pages:455-465
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28668
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhao-yang Liu,Li-yuan Liu,Member, IEEE,et al. A CMOS Fully Integrated 860-GHz Terahertz Sensor[J]. IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY,2017,7(4):455-465.
APA Zhao-yang Liu,Li-yuan Liu,Member, IEEE,Jie Yang,&Nan-jian Wu.(2017).A CMOS Fully Integrated 860-GHz Terahertz Sensor.IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY,7(4),455-465.
MLA Zhao-yang Liu,et al."A CMOS Fully Integrated 860-GHz Terahertz Sensor".IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY 7.4(2017):455-465.
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