SEMI OpenIR  > 半导体超晶格国家重点实验室
Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Xia Wei; Fa-Guang Yan; Chao Shen; Quan-Shan Lv; Kai-You Wang
2017
Source PublicationChin. Phys. B
Volume26Issue:3Pages:038504
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28665
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xia Wei,Fa-Guang Yan,Chao Shen,et al. Photodetectors based on junctions of two-dimensional transition metal dichalcogenides[J]. Chin. Phys. B,2017,26(3):038504.
APA Xia Wei,Fa-Guang Yan,Chao Shen,Quan-Shan Lv,&Kai-You Wang.(2017).Photodetectors based on junctions of two-dimensional transition metal dichalcogenides.Chin. Phys. B,26(3),038504.
MLA Xia Wei,et al."Photodetectors based on junctions of two-dimensional transition metal dichalcogenides".Chin. Phys. B 26.3(2017):038504.
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