SEMI OpenIR  > 半导体超晶格国家重点实验室
Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy
Lixia Li; Dong Pan; Yongzhou Xue; Xiaolei Wang; Miaoling Lin; Dan Su; Qinglin Zhang; Xuezhe Yu; Hyok So; Dahai Wei; Baoquan Sun; Pingheng Tan; Anlian Pan; Jianhua Zhao
2017
Source PublicationNano Letters
Volume17Pages:622−630
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28663
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Lixia Li,Dong Pan,Yongzhou Xue,et al. Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy[J]. Nano Letters,2017,17:622−630.
APA Lixia Li.,Dong Pan.,Yongzhou Xue.,Xiaolei Wang.,Miaoling Lin.,...&Jianhua Zhao.(2017).Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy.Nano Letters,17,622−630.
MLA Lixia Li,et al."Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy".Nano Letters 17(2017):622−630.
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