SEMI OpenIR  > 半导体超晶格国家重点实验室
Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions
Xia Wei; Faguang Yan; Quanshan Lv; Chao Shen; Kaiyou Wang
2017
Source PublicationNanoscale
Volume9Pages:8388-8392
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28661
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xia Wei,Faguang Yan,Quanshan Lv,et al. Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions[J]. Nanoscale,2017,9:8388-8392.
APA Xia Wei,Faguang Yan,Quanshan Lv,Chao Shen,&Kaiyou Wang.(2017).Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions.Nanoscale,9,8388-8392.
MLA Xia Wei,et al."Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions".Nanoscale 9(2017):8388-8392.
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