Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer | |
Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer | |
2017 | |
Source Publication | Appl. Phys. Lett.
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Volume | 111Pages:253502 |
Subject Area | 微电子学 |
Indexed By | SCI |
Date Available | 2018-07-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28658 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer. Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer[J]. Appl. Phys. Lett.,2017,111:253502. |
APA | Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer.(2017).Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer.Appl. Phys. Lett.,111,253502. |
MLA | Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer."Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer".Appl. Phys. Lett. 111(2017):253502. |
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