SEMI OpenIR  > 半导体超晶格国家重点实验室
GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy
Lixia Li; Dong Pan; Hyok So; Xiaolei Wang; Zhifeng Yu; Jianhua Zhao
2017
Source PublicationJournal of Alloys and Compounds
Volume724Pages:659-665
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28657
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Lixia Li,Dong Pan,Hyok So,et al. GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy[J]. Journal of Alloys and Compounds,2017,724:659-665.
APA Lixia Li,Dong Pan,Hyok So,Xiaolei Wang,Zhifeng Yu,&Jianhua Zhao.(2017).GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy.Journal of Alloys and Compounds,724,659-665.
MLA Lixia Li,et al."GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy".Journal of Alloys and Compounds 724(2017):659-665.
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