Knowledge Management System Of Institute of Semiconductors,CAS
Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy | |
Hyok So; Dong Pan; Lixia Li; Jianhua Zhao | |
2017 | |
Source Publication | Nanotechnology
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Volume | 28Pages:135704 (9pp) |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2018-07-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28656 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Hyok So,Dong Pan,Lixia Li,et al. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy[J]. Nanotechnology,2017,28:135704 (9pp). |
APA | Hyok So,Dong Pan,Lixia Li,&Jianhua Zhao.(2017).Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.Nanotechnology,28,135704 (9pp). |
MLA | Hyok So,et al."Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy".Nanotechnology 28(2017):135704 (9pp). |
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Foreign-catalyst-fre(4298KB) | 限制开放 | License | Application Full Text |
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