SEMI OpenIR  > 半导体超晶格国家重点实验室
Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy
Hyok So; Dong Pan; Lixia Li; Jianhua Zhao
2017
Source PublicationNanotechnology
Volume28Pages:135704 (9pp)
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28656
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hyok So,Dong Pan,Lixia Li,et al. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy[J]. Nanotechnology,2017,28:135704 (9pp).
APA Hyok So,Dong Pan,Lixia Li,&Jianhua Zhao.(2017).Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.Nanotechnology,28,135704 (9pp).
MLA Hyok So,et al."Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy".Nanotechnology 28(2017):135704 (9pp).
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