Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy

	Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy
	Hyok So; Dong Pan; Lixia Li; Jianhua Zhao
	2017
Source Publication	Nanotechnology
Volume	28 Pages:135704 (9pp)
Subject Area	半导体物理
Indexed By	SCI
Date Available	2018-07-02
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28656
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Hyok So,Dong Pan,Lixia Li,et al. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy[J]. Nanotechnology,2017,28:135704 (9pp).
APA	Hyok So,Dong Pan,Lixia Li,&Jianhua Zhao.(2017).Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.Nanotechnology,28,135704 (9pp).
MLA	Hyok So,et al."Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy".Nanotechnology 28(2017):135704 (9pp).

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