SEMI OpenIR  > 半导体超晶格国家重点实验室
L10-MnGa based magnetic tunnel junction for high magnetic field sensor
X P Zhao; J Lu; S W Mao; Z F Yu; H L Wang; X L Wang; D H Wei; J H Zhao1
2017
Source PublicationJournal of Physics D: Applied Physics
Volume50Pages:285002 (6pp)
Subject Area半导体物理
Indexed BySCI
Date Available2018-07-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28654
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
X P Zhao,J Lu,S W Mao,et al. L10-MnGa based magnetic tunnel junction for high magnetic field sensor[J]. Journal of Physics D: Applied Physics,2017,50:285002 (6pp).
APA X P Zhao.,J Lu.,S W Mao.,Z F Yu.,H L Wang.,...&J H Zhao1.(2017).L10-MnGa based magnetic tunnel junction for high magnetic field sensor.Journal of Physics D: Applied Physics,50,285002 (6pp).
MLA X P Zhao,et al."L10-MnGa based magnetic tunnel junction for high magnetic field sensor".Journal of Physics D: Applied Physics 50(2017):285002 (6pp).
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