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| 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K | |
| Yongzhou Xue; Zesheng Chen; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Xiuming Dou; Baoquan Sun | |
| 2017 | |
| Source Publication | Appl. Phys. Lett.
 |
| Volume | 111Pages:182102 |
| Subject Area | 半导体物理 |
| Indexed By | SCI |
| Date Available | 2018-06-15 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28617 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Yongzhou Xue,Zesheng Chen,Haiqiao Ni,et al. 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K[J]. Appl. Phys. Lett.,2017,111:182102. |
| APA | Yongzhou Xue.,Zesheng Chen.,Haiqiao Ni.,Zhichuan Niu.,Desheng Jiang.,...&Baoquan Sun.(2017).1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K.Appl. Phys. Lett.,111,182102. |
| MLA | Yongzhou Xue,et al."1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K".Appl. Phys. Lett. 111(2017):182102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 1.3 μm single-photon（791KB） | 限制开放 | License | Application Full Text | |||
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