SEMI OpenIR  > 半导体超晶格国家重点实验室
1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K
Yongzhou Xue; Zesheng Chen; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Xiuming Dou; Baoquan Sun
2017
Source PublicationAppl. Phys. Lett.
Volume111Pages:182102
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28617
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yongzhou Xue,Zesheng Chen,Haiqiao Ni,et al. 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K[J]. Appl. Phys. Lett.,2017,111:182102.
APA Yongzhou Xue.,Zesheng Chen.,Haiqiao Ni.,Zhichuan Niu.,Desheng Jiang.,...&Baoquan Sun.(2017).1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K.Appl. Phys. Lett.,111,182102.
MLA Yongzhou Xue,et al."1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K".Appl. Phys. Lett. 111(2017):182102.
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