SEMI OpenIR  > 半导体超晶格国家重点实验室
Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice
Han Bi; Xi Han; Lu Liu; Yunhao Zhao; Xuebing Zhao; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Yi Shi; Renchao Che
2017
Source PublicationACS Applied Materials & Interfaces
Volume9Pages:26642−26647
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28614
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Han Bi,Xi Han,Lu Liu,et al. Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice[J]. ACS Applied Materials & Interfaces,2017,9:26642−26647.
APA Han Bi.,Xi Han.,Lu Liu.,Yunhao Zhao.,Xuebing Zhao.,...&Renchao Che.(2017).Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice.ACS Applied Materials & Interfaces,9,26642−26647.
MLA Han Bi,et al."Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice".ACS Applied Materials & Interfaces 9(2017):26642−26647.
Files in This Item:
File Name/Size DocType Version Access License
Atomic Mechanism of (4975KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Han Bi]'s Articles
[Xi Han]'s Articles
[Lu Liu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Han Bi]'s Articles
[Xi Han]'s Articles
[Lu Liu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Han Bi]'s Articles
[Xi Han]'s Articles
[Lu Liu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.