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Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser
Xiang Li; Hong Wang; Zhongliang Qiao; Xin Guo; Geok Ing Ng; Yu Zhang; Zhichuan Niu; Cunzhu Tong; Chongyang Liu
2017
Source PublicationAPPLIED PHYSICS LETTERS
Volume111Issue:25Pages:251105
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28612
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiang Li,Hong Wang,Zhongliang Qiao,et al. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser[J]. APPLIED PHYSICS LETTERS,2017,111(25):251105.
APA Xiang Li.,Hong Wang.,Zhongliang Qiao.,Xin Guo.,Geok Ing Ng.,...&Chongyang Liu.(2017).Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser.APPLIED PHYSICS LETTERS,111(25),251105.
MLA Xiang Li,et al."Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser".APPLIED PHYSICS LETTERS 111.25(2017):251105.
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