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Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser | |
Xiang Li; Hong Wang; Zhongliang Qiao; Xin Guo; Geok Ing Ng; Yu Zhang; Zhichuan Niu; Cunzhu Tong; Chongyang Liu | |
2017 | |
Source Publication | APPLIED PHYSICS LETTERS
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Volume | 111Issue:25Pages:251105 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2018-06-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28612 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Xiang Li,Hong Wang,Zhongliang Qiao,et al. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser[J]. APPLIED PHYSICS LETTERS,2017,111(25):251105. |
APA | Xiang Li.,Hong Wang.,Zhongliang Qiao.,Xin Guo.,Geok Ing Ng.,...&Chongyang Liu.(2017).Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser.APPLIED PHYSICS LETTERS,111(25),251105. |
MLA | Xiang Li,et al."Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser".APPLIED PHYSICS LETTERS 111.25(2017):251105. |
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File Name/Size | DocType | Version | Access | License | ||
Modal gain character(1382KB) | 限制开放 | License | Application Full Text |
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