Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector

	Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector
	Ruiting Hao; Yang Ren; Sijia Liu; Jie Guo; Guowei Wang; Yingqiang Xu; Zhichuan Niu
	2017
Source Publication	Journal of Crystal Growth
Volume	470 Pages:33–36
Subject Area	半导体物理
Indexed By	SCI
Date Available	2018-06-15
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28611
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Ruiting Hao,Yang Ren,Sijia Liu,et al. Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector[J]. Journal of Crystal Growth,2017,470:33–36.
APA	Ruiting Hao.,Yang Ren.,Sijia Liu.,Jie Guo.,Guowei Wang.,...&Zhichuan Niu.(2017).Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector.Journal of Crystal Growth,470,33–36.
MLA	Ruiting Hao,et al."Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector".Journal of Crystal Growth 470(2017):33–36.

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