Knowledge Management System Of Institute of Semiconductors,CAS
Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector | |
Ruiting Hao; Yang Ren; Sijia Liu; Jie Guo; Guowei Wang; Yingqiang Xu; Zhichuan Niu | |
2017 | |
Source Publication | Journal of Crystal Growth
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Volume | 470Pages:33–36 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2018-06-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28611 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Ruiting Hao,Yang Ren,Sijia Liu,et al. Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector[J]. Journal of Crystal Growth,2017,470:33–36. |
APA | Ruiting Hao.,Yang Ren.,Sijia Liu.,Jie Guo.,Guowei Wang.,...&Zhichuan Niu.(2017).Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector.Journal of Crystal Growth,470,33–36. |
MLA | Ruiting Hao,et al."Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector".Journal of Crystal Growth 470(2017):33–36. |
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Fabrication and char(732KB) | 限制开放 | License | Application Full Text |
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