SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE
Xiao-Meng Zhao; Yang Zhang; Li-Jie Cui; Min Guan; Bao-Qiang Wang; Zhan-Ping Zhu; Yi-Ping Zeng
2017
Source PublicationCHIN. PHYS. LETT.
Volume34Issue:7Pages:076105
Subject Area半导体材料
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28604
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiao-Meng Zhao,Yang Zhang,Li-Jie Cui,et al. Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE[J]. CHIN. PHYS. LETT.,2017,34(7):076105.
APA Xiao-Meng Zhao.,Yang Zhang.,Li-Jie Cui.,Min Guan.,Bao-Qiang Wang.,...&Yi-Ping Zeng.(2017).Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE.CHIN. PHYS. LETT.,34(7),076105.
MLA Xiao-Meng Zhao,et al."Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE".CHIN. PHYS. LETT. 34.7(2017):076105.
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