SEMI OpenIR  > 中科院半导体材料科学重点实验室
Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO
Zhan-Wei Shen; Feng Zhang; Sima Dimitrijev; Ji-Sheng Han; Guo-Guo Yan; Zheng-Xin Wen; Wan-Shun Zhao; Lei Wang; Xing-Fang Liu; Guo-Sheng Sun; Yi-Ping Zeng
2017
Source PublicationChinese Physics B
Volume26Issue:10Pages:107101
Subject Area半导体材料
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28603
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhan-Wei Shen,Feng Zhang,Sima Dimitrijev,等. Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO[J]. Chinese Physics B,2017,26(10):107101.
APA Zhan-Wei Shen.,Feng Zhang.,Sima Dimitrijev.,Ji-Sheng Han.,Guo-Guo Yan.,...&Yi-Ping Zeng.(2017).Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO.Chinese Physics B,26(10),107101.
MLA Zhan-Wei Shen,et al."Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO".Chinese Physics B 26.10(2017):107101.
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