SEMI OpenIR  > 半导体超晶格国家重点实验室
Tunable Schottky Barrier at MoSe2/Metal Interfaces with a Buffer Layer
Le Huang; Bo Li; Mianzeng Zhong; Zhongming Wei; Jingbo Li
2017
Source PublicationThe Journal of Physical Chemistry C
Volume121Pages:9305−9311
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28598
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Le Huang,Bo Li,Mianzeng Zhong,et al. Tunable Schottky Barrier at MoSe2/Metal Interfaces with a Buffer Layer[J]. The Journal of Physical Chemistry C,2017,121:9305−9311.
APA Le Huang,Bo Li,Mianzeng Zhong,Zhongming Wei,&Jingbo Li.(2017).Tunable Schottky Barrier at MoSe2/Metal Interfaces with a Buffer Layer.The Journal of Physical Chemistry C,121,9305−9311.
MLA Le Huang,et al."Tunable Schottky Barrier at MoSe2/Metal Interfaces with a Buffer Layer".The Journal of Physical Chemistry C 121(2017):9305−9311.
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