SEMI OpenIR  > 中科院半导体材料科学重点实验室
Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition
Hong-Yan Chen; Hong-Liang Lu; Jin-Xin Chen; Feng Zhang; Xin-Ming Ji; Wen-Jun Liu; Xiao-Feng Yang; David Wei Zhang
2017
Source PublicationACS Applied Materials & Interfaces
Volume9Issue:44Pages:38662-38669
Subject Area半导体材料
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28596
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Hong-Yan Chen,Hong-Liang Lu,Jin-Xin Chen,et al. Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition[J]. ACS Applied Materials & Interfaces,2017,9(44):38662-38669.
APA Hong-Yan Chen.,Hong-Liang Lu.,Jin-Xin Chen.,Feng Zhang.,Xin-Ming Ji.,...&David Wei Zhang.(2017).Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition.ACS Applied Materials & Interfaces,9(44),38662-38669.
MLA Hong-Yan Chen,et al."Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition".ACS Applied Materials & Interfaces 9.44(2017):38662-38669.
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