SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films
Xiaomeng Zhao; Yang Zhang; Min Guan; Lijie Cui; Baoqiang Wang; Zhanping Zhu; Yiping Zeng
2017
Source PublicationJournal of Crystal Growth
Volume470Pages:1–7
Subject Area半导体材料
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28595
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiaomeng Zhao,Yang Zhang,Min Guan,et al. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films[J]. Journal of Crystal Growth,2017,470:1–7.
APA Xiaomeng Zhao.,Yang Zhang.,Min Guan.,Lijie Cui.,Baoqiang Wang.,...&Yiping Zeng.(2017).Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films.Journal of Crystal Growth,470,1–7.
MLA Xiaomeng Zhao,et al."Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films".Journal of Crystal Growth 470(2017):1–7.
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