| Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films | |
| Xiaomeng Zhao; Yang Zhang; Min Guan; Lijie Cui; Baoqiang Wang; Zhanping Zhu; Yiping Zeng | |
| 2017 | |
| Source Publication | Journal of Crystal Growth
 |
| Volume | 470Pages:1–7 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2018-06-15 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28595 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Xiaomeng Zhao,Yang Zhang,Min Guan,et al. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films[J]. Journal of Crystal Growth,2017,470:1–7. |
| APA | Xiaomeng Zhao.,Yang Zhang.,Min Guan.,Lijie Cui.,Baoqiang Wang.,...&Yiping Zeng.(2017).Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films.Journal of Crystal Growth,470,1–7. |
| MLA | Xiaomeng Zhao,et al."Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films".Journal of Crystal Growth 470(2017):1–7. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effect of InSbIn0.9A（1890KB） | 限制开放 | License | Application Full Text | |||
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