Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films | |
Xiaomeng Zhao; Yang Zhang; Min Guan; Lijie Cui; Baoqiang Wang; Zhanping Zhu; Yiping Zeng | |
2017 | |
Source Publication | Journal of Crystal Growth
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Volume | 470Pages:1–7 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Date Available | 2018-06-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28595 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Xiaomeng Zhao,Yang Zhang,Min Guan,et al. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films[J]. Journal of Crystal Growth,2017,470:1–7. |
APA | Xiaomeng Zhao.,Yang Zhang.,Min Guan.,Lijie Cui.,Baoqiang Wang.,...&Yiping Zeng.(2017).Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films.Journal of Crystal Growth,470,1–7. |
MLA | Xiaomeng Zhao,et al."Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films".Journal of Crystal Growth 470(2017):1–7. |
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Effect of InSbIn0.9A(1890KB) | 限制开放 | License | Application Full Text |
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