SEMI OpenIR  > 半导体超晶格国家重点实验室
Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes
Yuexi Lyu; Xi Han; Yaoyao Sun; Zhi Jiang; Chunyan Guo; Wei Xiang; Yinan Dong; Jie Cui; Yuan Yao; Dongwei Jiang; Guowei Wang; Yingqiang Xu
2017
Source PublicationJournal of Crystal Growth
Volume482Pages:70–74
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28592
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yuexi Lyu,Xi Han,Yaoyao Sun,et al. Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes[J]. Journal of Crystal Growth,2017,482:70–74.
APA Yuexi Lyu.,Xi Han.,Yaoyao Sun.,Zhi Jiang.,Chunyan Guo.,...&Yingqiang Xu.(2017).Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes.Journal of Crystal Growth,482,70–74.
MLA Yuexi Lyu,et al."Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes".Journal of Crystal Growth 482(2017):70–74.
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