SEMI OpenIR  > 半导体超晶格国家重点实验室
Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors
Zhi Wang; Liwei Wang; Yunfei En; Xiang-Wei Jiang
2017
Source PublicationJournal of Applied Physics
Volume121Issue:22Pages:1-5
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28576
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhi Wang,Liwei Wang,Yunfei En,et al. Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors[J]. Journal of Applied Physics,2017,121(22):1-5.
APA Zhi Wang,Liwei Wang,Yunfei En,&Xiang-Wei Jiang.(2017).Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors.Journal of Applied Physics,121(22),1-5.
MLA Zhi Wang,et al."Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors".Journal of Applied Physics 121.22(2017):1-5.
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