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In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides
Zhi-Qiang Fan; Xiang-Wei Jiang; Jun-Wei Luo; Li-Ying Jiao; Ru Huang; Shu-Shen Li; Lin-Wang Wang
2017
Source PublicationPhysical Review B
Volume96Issue:16Pages:165402
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28571
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhi-Qiang Fan,Xiang-Wei Jiang,Jun-Wei Luo,et al. In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides[J]. Physical Review B,2017,96(16):165402.
APA Zhi-Qiang Fan.,Xiang-Wei Jiang.,Jun-Wei Luo.,Li-Ying Jiao.,Ru Huang.,...&Lin-Wang Wang.(2017).In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides.Physical Review B,96(16),165402.
MLA Zhi-Qiang Fan,et al."In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides".Physical Review B 96.16(2017):165402.
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