SEMI OpenIR  > 半导体超晶格国家重点实验室
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
Xiao-Xi Li; Zhi-Qiang Fan; Pei-Zhi Liu; Mao-Lin Chen; Xin Liu; Chuan-Kun Jia; Dong-Ming Sun; Xiang-Wei Jiang; Zheng Han; Vincent Bouchiat; Jun-Jie Guo; Jian-Hao Chen; Zhi-Dong Zhang
2017
Source PublicationNATURE COMMUNICATIONS
Volume8Issue:1Pages:970
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28570
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiao-Xi Li,Zhi-Qiang Fan,Pei-Zhi Liu,et al. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor[J]. NATURE COMMUNICATIONS,2017,8(1):970.
APA Xiao-Xi Li.,Zhi-Qiang Fan.,Pei-Zhi Liu.,Mao-Lin Chen.,Xin Liu.,...&Zhi-Dong Zhang.(2017).Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.NATURE COMMUNICATIONS,8(1),970.
MLA Xiao-Xi Li,et al."Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor".NATURE COMMUNICATIONS 8.1(2017):970.
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