Knowledge Management System Of Institute of Semiconductors,CAS
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor | |
Xiao-Xi Li; Zhi-Qiang Fan; Pei-Zhi Liu; Mao-Lin Chen; Xin Liu; Chuan-Kun Jia; Dong-Ming Sun; Xiang-Wei Jiang; Zheng Han; Vincent Bouchiat; Jun-Jie Guo; Jian-Hao Chen; Zhi-Dong Zhang | |
2017 | |
Source Publication | NATURE COMMUNICATIONS
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Volume | 8Issue:1Pages:970 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2018-06-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28570 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Xiao-Xi Li,Zhi-Qiang Fan,Pei-Zhi Liu,et al. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor[J]. NATURE COMMUNICATIONS,2017,8(1):970. |
APA | Xiao-Xi Li.,Zhi-Qiang Fan.,Pei-Zhi Liu.,Mao-Lin Chen.,Xin Liu.,...&Zhi-Dong Zhang.(2017).Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.NATURE COMMUNICATIONS,8(1),970. |
MLA | Xiao-Xi Li,et al."Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor".NATURE COMMUNICATIONS 8.1(2017):970. |
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File Name/Size | DocType | Version | Access | License | ||
Gate-controlled reve(1689KB) | 限制开放 | License | Application Full Text |
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