Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

	Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
	Xiao-Xi Li; Zhi-Qiang Fan; Pei-Zhi Liu; Mao-Lin Chen; Xin Liu; Chuan-Kun Jia; Dong-Ming Sun; Xiang-Wei Jiang; Zheng Han; Vincent Bouchiat; Jun-Jie Guo; Jian-Hao Chen; Zhi-Dong Zhang
	2017
Source Publication	NATURE COMMUNICATIONS
Volume	8 Issue:1 Pages:970
Subject Area	半导体物理
Indexed By	SCI
Date Available	2018-06-15
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28570
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Xiao-Xi Li,Zhi-Qiang Fan,Pei-Zhi Liu,et al. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor[J]. NATURE COMMUNICATIONS,2017,8(1):970.
APA	Xiao-Xi Li.,Zhi-Qiang Fan.,Pei-Zhi Liu.,Mao-Lin Chen.,Xin Liu.,...&Zhi-Dong Zhang.(2017).Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.NATURE COMMUNICATIONS,8(1),970.
MLA	Xiao-Xi Li,et al."Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor".NATURE COMMUNICATIONS 8.1(2017):970.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库