SEMI OpenIR  > 半导体超晶格国家重点实验室
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires
Jun-Wei Luo; Shu-Shen Li; Zunger, Alex
2017
Source PublicationPhysical Review Letters
Volume119Issue:12Pages:1
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28569
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jun-Wei Luo,Shu-Shen Li,Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires[J]. Physical Review Letters,2017,119(12):1.
APA Jun-Wei Luo,Shu-Shen Li,&Zunger, Alex.(2017).Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires.Physical Review Letters,119(12),1.
MLA Jun-Wei Luo,et al."Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires".Physical Review Letters 119.12(2017):1.
Files in This Item:
File Name/Size DocType Version Access License
Rapid Transition of (483KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Jun-Wei Luo]'s Articles
[Shu-Shen Li]'s Articles
[Zunger, Alex]'s Articles
Baidu academic
Similar articles in Baidu academic
[Jun-Wei Luo]'s Articles
[Shu-Shen Li]'s Articles
[Zunger, Alex]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Jun-Wei Luo]'s Articles
[Shu-Shen Li]'s Articles
[Zunger, Alex]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.