SEMI OpenIR  > 半导体超晶格国家重点实验室
Type-I Ca(OH)2/a-MoTe2 vdW heterostructure for ultraviolet optoelectronic device applications: electric field effects
Qiang Gao; Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Zhongming Wei; Jingbo Li
2017
Source PublicationJournal of Materials Chemistry C
Volume5Pages:12629--12634
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28563
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Qiang Gao,Congxin Xia,Wenqi Xiong,et al. Type-I Ca(OH)2/a-MoTe2 vdW heterostructure for ultraviolet optoelectronic device applications: electric field effects[J]. Journal of Materials Chemistry C,2017,5:12629--12634.
APA Qiang Gao.,Congxin Xia.,Wenqi Xiong.,Juan Du.,Tianxing Wang.,...&Jingbo Li.(2017).Type-I Ca(OH)2/a-MoTe2 vdW heterostructure for ultraviolet optoelectronic device applications: electric field effects.Journal of Materials Chemistry C,5,12629--12634.
MLA Qiang Gao,et al."Type-I Ca(OH)2/a-MoTe2 vdW heterostructure for ultraviolet optoelectronic device applications: electric field effects".Journal of Materials Chemistry C 5(2017):12629--12634.
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