SEMI OpenIR  > 半导体超晶格国家重点实验室
Ab initio performance predictions of single-layer In–V tunnel field-effect transistors
Juan Lu; Zhi-Qiang Fan; Jian Gong; Xiang-Wei Jiang
2017
Source PublicationPhys. Chem. Chem. Phys.
Volume19Pages:20121--20126
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28562
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Juan Lu,Zhi-Qiang Fan,Jian Gong,等. Ab initio performance predictions of single-layer In–V tunnel field-effect transistors[J]. Phys. Chem. Chem. Phys.,2017,19:20121--20126.
APA Juan Lu,Zhi-Qiang Fan,Jian Gong,&Xiang-Wei Jiang.(2017).Ab initio performance predictions of single-layer In–V tunnel field-effect transistors.Phys. Chem. Chem. Phys.,19,20121--20126.
MLA Juan Lu,et al."Ab initio performance predictions of single-layer In–V tunnel field-effect transistors".Phys. Chem. Chem. Phys. 19(2017):20121--20126.
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