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Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides
Le Huang; Lin Tao; Kai Gong; Yongtao Li; Huafeng Dong; Zhongming Wei; Jingbo Li
2017
Source PublicationPHYSICAL REVIEW B
Volume95Issue:20Pages:205303
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28560
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Le Huang,Lin Tao,Kai Gong,et al. Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides[J]. PHYSICAL REVIEW B,2017,95(20):205303.
APA Le Huang.,Lin Tao.,Kai Gong.,Yongtao Li.,Huafeng Dong.,...&Jingbo Li.(2017).Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides.PHYSICAL REVIEW B,95(20),205303.
MLA Le Huang,et al."Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides".PHYSICAL REVIEW B 95.20(2017):205303.
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