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Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer | |
Wenqi Xiong; Congxin Xia; Juan Du; Tianxing Wang; Xu Zhao; Yuting Peng; Zhongming Wei; Jingbo Li | |
2017 | |
Source Publication | PHYSICAL REVIEW B
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Volume | 95Issue:24Pages:245408 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2018-06-15 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28559 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Wenqi Xiong,Congxin Xia,Juan Du,et al. Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer[J]. PHYSICAL REVIEW B,2017,95(24):245408. |
APA | Wenqi Xiong.,Congxin Xia.,Juan Du.,Tianxing Wang.,Xu Zhao.,...&Jingbo Li.(2017).Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer.PHYSICAL REVIEW B,95(24),245408. |
MLA | Wenqi Xiong,et al."Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer".PHYSICAL REVIEW B 95.24(2017):245408. |
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Electrostatic gating(1122KB) | 限制开放 | License | Application Full Text |
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