Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer

	Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer
	Wenqi Xiong; Congxin Xia; Juan Du; Tianxing Wang; Xu Zhao; Yuting Peng; Zhongming Wei; Jingbo Li
	2017
Source Publication	PHYSICAL REVIEW B
Volume	95 Issue:24 Pages:245408
Subject Area	半导体物理
Indexed By	SCI
Date Available	2018-06-15
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28559
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Wenqi Xiong,Congxin Xia,Juan Du,et al. Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer[J]. PHYSICAL REVIEW B,2017,95(24):245408.
APA	Wenqi Xiong.,Congxin Xia.,Juan Du.,Tianxing Wang.,Xu Zhao.,...&Jingbo Li.(2017).Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer.PHYSICAL REVIEW B,95(24),245408.
MLA	Wenqi Xiong,et al."Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer".PHYSICAL REVIEW B 95.24(2017):245408.

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