SEMI OpenIR  > 半导体超晶格国家重点实验室
Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer
Wenqi Xiong; Congxin Xia; Juan Du; Tianxing Wang; Xu Zhao; Yuting Peng; Zhongming Wei; Jingbo Li
2017
Source PublicationPHYSICAL REVIEW B
Volume95Issue:24Pages:245408
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28559
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wenqi Xiong,Congxin Xia,Juan Du,et al. Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer[J]. PHYSICAL REVIEW B,2017,95(24):245408.
APA Wenqi Xiong.,Congxin Xia.,Juan Du.,Tianxing Wang.,Xu Zhao.,...&Jingbo Li.(2017).Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer.PHYSICAL REVIEW B,95(24),245408.
MLA Wenqi Xiong,et al."Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH)2/VS2 heterobilayer".PHYSICAL REVIEW B 95.24(2017):245408.
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