SEMI OpenIR  > 中科院半导体材料科学重点实验室
AlGaN/GaN HEMT 功率开关器件漏电与陷阱效应研究
郝美兰
Subtype博士
Thesis Advisor王占国
2016-06-02
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Date Available2018-06-14
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28546
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
郝美兰. AlGaN/GaN HEMT 功率开关器件漏电与陷阱效应研究[D]. 北京. 中国科学院研究生院,2016.
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