SEMI OpenIR  > 中科院半导体材料科学重点实验室
A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region
Zhengxin Wen; Feng Zhang; Member; IEEE; Zhanwei Shen; Lixin Tian; Guoguo Yan; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng
2017
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume38Issue:7Pages:941-944
Subject Area半导体材料
Indexed BySCI
Date Available2018-06-01
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28522
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhengxin Wen,Feng Zhang,Member,et al. A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(7):941-944.
APA Zhengxin Wen.,Feng Zhang.,Member.,IEEE.,Zhanwei Shen.,...&Yiping Zeng.(2017).A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region.IEEE ELECTRON DEVICE LETTERS,38(7),941-944.
MLA Zhengxin Wen,et al."A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region".IEEE ELECTRON DEVICE LETTERS 38.7(2017):941-944.
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