| A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region | |
| Zhengxin Wen; Feng Zhang; Member; IEEE; Zhanwei Shen; Lixin Tian; Guoguo Yan; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng | |
| 2017 | |
| Source Publication | IEEE ELECTRON DEVICE LETTERS
 |
| Volume | 38Issue:7Pages:941-944 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2018-06-01 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28522 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhengxin Wen,Feng Zhang,Member,et al. A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(7):941-944. |
| APA | Zhengxin Wen.,Feng Zhang.,Member.,IEEE.,Zhanwei Shen.,...&Yiping Zeng.(2017).A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region.IEEE ELECTRON DEVICE LETTERS,38(7),941-944. |
| MLA | Zhengxin Wen,et al."A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region".IEEE ELECTRON DEVICE LETTERS 38.7(2017):941-944. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| A Novel Silicon Carb（1287KB） | 限制开放 | License | Application Full Text | |||
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