SEMI OpenIR  > 半导体超晶格国家重点实验室
A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications
Congxin Xia; Juan Du; Wenqi Xiong; Yu Jia; Zhongming Wei; Jingbo Li
2017
Source PublicationJournal of Materials Chemistry A
Volume5Pages:13400–13410
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-01
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28521
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Congxin Xia,Juan Du,Wenqi Xiong,et al. A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications[J]. Journal of Materials Chemistry A,2017,5:13400–13410.
APA Congxin Xia,Juan Du,Wenqi Xiong,Yu Jia,Zhongming Wei,&Jingbo Li.(2017).A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications.Journal of Materials Chemistry A,5,13400–13410.
MLA Congxin Xia,et al."A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications".Journal of Materials Chemistry A 5(2017):13400–13410.
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