Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors | |
Denggui Wang; Xingwang Zhang; Heng Liu; Junhua Meng; Jing Xia; Zhigang Yin; Ye Wang; Jingbi You; Xiang-Min Meng | |
2017 | |
Source Publication | 2D Mater
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Volume | 4Pages:031012 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Date Available | 2018-06-01 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28508 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Denggui Wang,Xingwang Zhang,Heng Liu,et al. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors[J]. 2D Mater,2017,4:031012. |
APA | Denggui Wang.,Xingwang Zhang.,Heng Liu.,Junhua Meng.,Jing Xia.,...&Xiang-Min Meng.(2017).Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors.2D Mater,4,031012. |
MLA | Denggui Wang,et al."Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors".2D Mater 4(2017):031012. |
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