SEMI OpenIR  > 半导体超晶格国家重点实验室
Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating
Wenqi Xiong; Congxin Xia; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li
2017
Source PublicationNanotechnology
Volume28Pages:195702
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-01
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28499
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wenqi Xiong,Congxin Xia,Juan Du,et al. Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating[J]. Nanotechnology,2017,28:195702.
APA Wenqi Xiong.,Congxin Xia.,Juan Du.,Tianxing Wang.,Yuting Peng.,...&Jingbo Li.(2017).Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating.Nanotechnology,28,195702.
MLA Wenqi Xiong,et al."Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating".Nanotechnology 28(2017):195702.
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