SEMI OpenIR  > 半导体超晶格国家重点实验室
Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators
Lingjie Du; Tingxin Li; Wenkai Lou; Xingjun Wu; Xiaoxue Liu; Zhongdong Han; Chi Zhang; Gerard Sullivan; Amal Ikhlassi; Kai Chang; Rui-Rui Du
2017
Source PublicationPHYSICAL REVIEW LETTERS
Volume119Issue:5Pages:056803
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-01
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28496
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Lingjie Du,Tingxin Li,Wenkai Lou,et al. Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators[J]. PHYSICAL REVIEW LETTERS,2017,119(5):056803.
APA Lingjie Du.,Tingxin Li.,Wenkai Lou.,Xingjun Wu.,Xiaoxue Liu.,...&Rui-Rui Du.(2017).Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators.PHYSICAL REVIEW LETTERS,119(5),056803.
MLA Lingjie Du,et al."Tuning Edge States in Strained-Layer InAs=GaInSb Quantum Spin Hall Insulators".PHYSICAL REVIEW LETTERS 119.5(2017):056803.
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